oc to be r 2 00 1 f dfs6n303 fetkey n -c hannel mosfet with schottky diode general description features mosfet maximum ratings t a = 25 o c unless otherwise noted symbol parameter f dfs6n303 units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) 6 a - pulsed 30 p d power dissipation for dual operation 2 w power dissipation for single operation (note 1a) 1.6 (note 1c ) 0.9 t j ,t stg operating and storage temperature range -55 to 150 c schottky diode maximum ratings t a = 25 o c unless otherwise noted v rrm repetitive peak reverse voltage 30 v i o average forward current (note 1a) 2 a ? 2 00 1 f a ir ch i l d s em i co n du c to r c or p or a ti o n fdfs6n 303 rev. d 6 a, 3 0 v. r ds(on ) = 0.035 w @ v gs = 10 v . r ds(on ) = 0. 050 w @ v gs = 4.5 v . v f < 0.28 v @ 0.1 a v f < 0.42 v @ 3 a v f < 0.5 0 v @ 6 a . schottky and mosfet incorporated into single power surface mount so-8 package. general purpose pinout for design flexi bility. ideal for dc/dc converter applications. sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 fairchild semiconductor's fetkey technology incorporates a high cell density mosfet and low forward drop (0.35 v) schottky diode into a single surface mount power package. the mosfet and schottky diode are isolated inside the package. the general purpose pinout has been chosen to maximize flexi bility and ease of use. fetkey products are particularly suited for switching applications such as dc/ dc buck, boost, synchronous, and non-synchronous converters w here the mosfet is driven as low as 4.5v and fast switching, high efficiency and small pcb footprint is desirable. a c s a so-8 d d c g pin 1 fdfs 6n303 a a c c d d g s 6 7 5 1 2 3 4 8
electrical characteristics (t a = 25 o c unless otherwise noted ) mosfet electrical characteristics symbol parameter conditions min typ max units bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j =12 5c 20 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.7 3 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6 a 0.025 0.035 w v gs = 4.5 v, i d = 4.8 a 0.043 0.05 g fs forward transconductance v ds = 10 v, i d = 6 a 12 s i d(on) on-state drain current v gs = 10 v, v ds = 5 v 15 a c iss input capacitance v ds = 15 v, v gs = 0 v, 350 pf c oss output capacitance f = 1.0 mhz 220 pf c rss reverse transfer capacitance 80 pf q g total gate charge v ds = 15 v, i d = 6 a, v gs = 10 v 12 17 nc t d(on ) turn - on delay time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 7.5 15 ns t r turn - on rise time 12 25 ns t d(off) turn - off delay time 13 25 ns t f turn - off fall time 6 15 ns mosfet drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 1.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2 ) 0.8 1.2 v schottky diode characteristics b v reverse breakdown voltage i r = 1 ma 30 v i r reverse leakage v r = 30 v 0.5 ma v f forward voltage i f = 0.1 a 280 mv i f = 3 a 420 i f = 6 a 5 0 0 thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a ) 78 c/w r q jc thermal resistance, junction-to-case (note 1) 40 c/w notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. FDFS6N303 rev. d c. 13 5 o c/w on a 0.003 in 2 pad of 2oz copper. b . 12 5 o c/w on a 0.02 in 2 pad of 2oz copper. a . 78 o c/w on a 0.5 in 2 pad of 2oz copper.
FDFS6N303 rev. d typical electrical characteristics figure 1. on-region characteristics . figure 2. on-resistance variation with drain current and gate voltage . figure 3. on-resistance variation with temperature . figure 5 . transfer characteristics. figure 6 . body diode forward voltage varia tion with source current and temperature. figure 4 . on-resistance variation with gate-to -source voltage. 0 1 2 3 4 0 5 10 15 20 25 30 v , drain-source voltage (v) i , drain-source current (a) v = 10v gs 3.5v 3.0v 4.5v 4.0v 5.0v ds d 6.0v 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance v = 4.0v gs 10v 5.0v 4.5v d 6.0v 7.0v r , normalized ds(on) 2 4 6 8 10 0 0.025 0.05 0.075 0.1 v , gate to source voltage (v) gs r , on-resistance (ohm) ds(on) 25c i = 3a d t = 125c a 1 2 3 4 5 6 7 0 5 10 15 20 25 30 v , gate to source voltage (v) i , drain current (a) gs 25c 125c v = 5v ds d t = -55c a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 30 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c a 25c -55c v = 0v gs sd s -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j v = 10v gs i = 6a d r , normalized ds(on)
FDFS6N303 rev. d typical fet and schottky electrical characteristics figure 8. capacitance characteristics . figure 7 . gate charge characteristics. 0 2 4 6 8 10 12 14 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i = 6.0a d v = 5v ds 10v 15v 0.1 0.3 1 3 10 30 50 100 200 500 1000 v , drain to source voltage (v) capacitance (pf) ds f = 1 mhz v = 0v gs c oss c iss c rss 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r =135 c/w q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 figure 11 . transient thermal response curve . thermal characterization performed using the conditions described in n ote 1c. transient thermal response will change depending on the circuit board design. figure 10. schottky diode re verse current . figure 9. schottky diode forward voltage . 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 1 10 v , forward voltage (v) i , forward current (a) 25c f f t = 125c j 0 5 10 15 20 25 30 0.00001 0.0001 0.001 0.01 0.1 1 v , reverse voltage (v) i , reverse current (a) t = 125c j 25c r r
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